2009-09- 28 rev.2 . 4 page 1 IDP06E60 fast switching diode product summary v rrm 600 v i f 6 a v f 1.5 v t j max 175 c pin 1 pin 2 pin 3 c a - marking d06e60 type package ordering code IDP06E60 p g -to220-2 - maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 600 v continous forward current t c =25c t c =90c i f 14.7 10 a surge non repetitive forward current t c =25c, t p =10 ms, sine halfwave i fsm 29 maximum repetitive forward current t c =25c, t p limited by t jmax , d =0.5 i frm 22 power dissipation t c =25c t c =90c p tot 46.9 26.6 w operating and storage temperature t j , t st g -55...+175 c soldering temperature wavesoldering, 1.6mm (0.063 in.) from case for 10s t s 2 60 c features ? 600 v diode technology ? fast recovery ? soft switching ? low reverse recovery charge ? low forward voltage ? easy paralleling ? pb-free lead plating; rohs compliant ? halogen-free according to iec61249-2-21 ? qualified according to jedec for target applications pg-to220-2
2009-09- 28 rev.2 . 4 page 2 IDP06E60 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 3.2 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - 35 62 - electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics reverse leakage current v r =600v, t j =25c v r =600v, t j =150c i r - - - - 50 500 a forward voltage drop i f =6a, t j =25c i f =6a, t j =150c v f - - 1.5 1.5 2 - v 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2009-09- 28 rev.2 . 4 page 3 IDP06E60 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics reverse recovery time v r =400v, i f =6a, d i/dt =550a/s, t j =25c v r =400v, i f =6a, d i/dt =550a/s , t j =125c v r =400v, i f =6a, d i/dt =550a/s , t j =150c t rr - - - 70 100 105 - - - ns peak reverse current v r =400v, i f =6a, d i /d t =550a/s, t j =25c v r =400v, i f =6a, d i /d t =550a/s, t j =125c v r =400v, i f =6a, d i /d t =550a/s, t j =150c i rrm - - - 6.5 7.4 7.9 - - - a reverse recovery charge v r =400v, i f =6a, d i /d t =550a/s, t j =25c v r =400v, i f =6a, d i /d t =550a/s, t j =125c v r =400v, i f =6a, d i /d t =550a/s, t j =150c q rr - - - 240 360 400 - - - nc reverse recovery softness factor v r =400v, i f =6a, d i f /d t =550a/s, t j =25c v r =400v, i f =6a, d i f /d t =550a/s, t j =125c v r =400v, i f =6a, d i f /d t =550a/s, t j =150c s - - - 4 4.8 4.9 - - -
2009-09- 28 rev.2 . 4 page 4 IDP06E60 2 diode forward current i f = f( t c ) parameter: t j 175c 25 50 75 100 125 c 175 t c 0 2 4 6 8 10 12 a 16 i f 1 power dissipation p tot = f ( t c ) parameter: t j 175 c 25 50 75 100 125 c 175 t c 0 5 10 15 20 25 30 35 40 w 50 p tot 3 typ. diode forward current i f = f ( v f ) 0 0.5 1 1.5 v 2.5 v f 0 2 4 6 8 10 12 14 a 18 i f -55c 25c 100c 150c 4 typ. diode forward voltage v f = f ( t j ) -60 -20 20 60 100 c 160 t j 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 v 2 v f 3a 6a 12a
2009-09- 28 rev.2 . 4 page 5 IDP06E60 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 a/s 800 d i f /d t 0 50 100 150 200 ns 300 t rr 12a 6a 3a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 400v, t j = 125 c 200 300 400 500 600 a/s 800 d i f /d t 250 275 300 325 350 375 400 425 450 475 500 nc 550 q rr 3a 6a 12a 7 typ. reverse recovery current i rr = f (d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 a/s 800 d i f /d t 3 4 5 6 7 8 9 a 11 i rr 12a 6a 3a 8 typ. reverse recovery softness factor s = f(d i f /d t ) parameter: v r = 400v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 0 1 2 3 4 5 6 7 8 9 11 s 12a 6a 3a
2009-09- 28 rev.2 . 4 page 6 IDP06E60 9 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w IDP06E60 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2009-09- 28 rev.2 . 4 page 7 IDP06E60
2009-09- 28 rev.2 . 4 page8 IDP06E60 published by infineon technologies ag 81726 munich, germany 81726 mnchen, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infi neon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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